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Midium Power Transistors (-50V / -3A)

MP6T13



Structure



Dimensions (Unit : mm)

PNP Silicon epitaxial planar transistor



Features

1) Low saturation voltage

2) High speed switching



Applications



Inner circuit (Unit : mm)

Package

MPT6

Code

TR

Basic ordering unit (pieces)

1000



Absolute maximum ratings (Ta=25°C)

　

<It is the same ratings for the Tr.1 and Tr.2>

Symbol

Limits

Unit

Collector-base voltage

-50

V

Collector-emitter voltage

-50

V

Emitter-base voltage

-6

V

DC

-3

A

Pulsed

-6

A

2.0

W/Total

1.4

W/Element

Junction temperature

150

C

Range of storage temperature

-55 to 150

C

*1 Pw=10ms, Single Pulse

*2 Mounted on a 40 x 40 x 0.7[mm] ceramic board

Low Frequency Amplifier

Driver



Packaging specifications

Type

Parameter

Collector current

Power dissipation

*1

*2

*2

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

(1) Tr.1 Emitter

(2) Tr.1 Base

(3) Tr.2 Collector

(4) Tr.2 Emitter

(5) Tr.2 Base

(6) Tr.1 Collector

(1)

(2)

(3)

(4)

(5)

(6)

Tr.1

Tr.2

MPT6

(Dual)

(1)

(2)

(3)

(6)

(5)

(4)

1/5

2010.12 - Rev.A