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LH5164ASH Arkusz danych(PDF) 5 Page - Sharp Corporation |
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LH5164ASH Arkusz danych(HTML) 5 Page - Sharp Corporation |
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5 / 10 page ![]() DATA RETENTION CHARACTERISTICS (TA = -40 to +85°C) 2.5 V DATA RETENTION MODE VCC 0 V VCC - 0.5 V tCDR 5164ASH-6 tR VCCDR CE1 CE1 ≥ VCCDR - 0.2 V 0 V VCCDR 0.2 V 2.5 V DATA RETENTION MODE tCDR tR CE2 CONTROL CE1 CONTROL (NOTE) CE2 0.2 V NOTE: To control data hold at CE1, fix the input level of CE2 between VCCDR to VCCDR - 0.2 V or 0 V to 0.2 V during the data retention. VCC CE2 ≥ Figure 4. Low Voltage Data Retention PARAMETER SYMBOL CONDITIONS MIN. MAX. UNIT NOTE Data retention supply voltage VCCDR CE2 ≤ 0.2 V or CE1 ≥ VCCDR – 0.2 V 2.0 5.5 V 1 Data retention supply current ICCDR VCCDR = 3 V, CE2 ≤ 0.2 V or CE1 ≥ VCCDR – 0.2 V TA = 25 °C 0.2 µA 1 TA = 40 °C 0.4 µA 0.6 µA Chip disable to data retention tCDR 0ns Recovery time tR tRC ns 2 NOTES: 1. CE2 should be ≥ VCCDR - 0.2 V or ≤ 0.2 V when CE1 ≥ VCCDR - 0.2 V. 2. tRC = Read cycle time CMOS 64K (8K × 8) Static RAM LH5164ASH 5 |
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