LSM303DLM datasheet(10/38 Pages) STMICROELECTRONICS

10 / 38 page

Module specifications

LSM303DLM

10/38

Doc ID 018725 Rev 1

2.2

Electrical characteristics

@ Vdd = 2.5 V, T = 25 °C unless otherwise noted.

LA_TCSo

Linear acceleration sensitivity

change vs. temperature

FS bit set to 00

±0.01

%/°C

LA_TyOff

Linear acceleration typical

Zero-

g level offset

accuracy(3),(4)

FS bit set to 00

±60

LA_TCOff

Linear acceleration Zero-

g level

change vs. temperature

Max. delta from 25 °C

±0.5

g/°C

M_CAS

Magnetic cross-axis sensitivity

Cross field = 0.5 gauss

H applied = ±3 gauss

±1

%FS/

gauss

M_EF

Maximum exposed field

No permitting effect on

zero reading

10000

gauss

M_R

Magnetic resolution

mgauss

M_DF

Disturbing field

Sensitivity starts to

degrade. Use S/R pulse to

restore sensitivity

gauss

Top

Operating temperature range

-40

+85

°C

Typical specifications are not guaranteed.

Verified by wafer level test and measurement of initial offset and sensitivity.

Typical Zero-

g level offset value after MSL3 preconditioning.

Offset can be eliminated by enabling the built-in high-pass filter.

Table 3.

Sensor characteristics (continued)

Symbol

Parameter

Test conditions

Min.

Typ.(1)

Max.

Unit

Table 4.

Electrical characteristics

Symbol

Parameter

Test

conditions

Min.

Typ.(1)

Max.

Unit

Vdd

Supply voltage

2.16

3.6

Vdd_IO

Module power supply for I/O

1.71

1.8

Vdd+0.1

Idd

Current consumption in normal

mode(2)

360

µA

IddPdn

Current consumption in power-

down mode

2µA

Top

Operating temperature range

-40

+85

°C

Typical specifications are not guaranteed.

Magnetic sensor setting ODR = 7.5 Hz. Accelerometer sensor ODR = 50 Hz.

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