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ZPY30 Arkusz danych(PDF) 3 Page - Diotec Semiconductor

Numer części ZPY30
Szczegółowy opis  Silicon-Power-Zener Diodes (non-planar technology)
PDF  3 Pages
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Producent  DIOTEC [Diotec Semiconductor]
Strona internetowa  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

ZPY30 Arkusz danych(HTML) 3 Page - Diotec Semiconductor

  ZPY30 Datasheet HTML 1Page - Diotec Semiconductor ZPY30 Datasheet HTML 2Page - Diotec Semiconductor ZPY30 Datasheet HTML 3Page - Diotec Semiconductor  
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ZPY1 ... ZPY200 (1.3 W)
© Diotec Semiconductor AG
http://www.diotec.com/
3
120
100
80
60
40
20
0
[%]
P
tot
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
[°C]
T
A
150
100
50
0
10
10
1
10
10
2
-1
-2
[A]
I
F
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
T = 25°C
j
T = 125°C
j
30a-(1a-1.1v)
[pF]
[V]
C
j
V
Z
T = 25°C
f = 1.0 MHz
j
V = 0V
R
V = 4V
R
V = 20V
R
V = 40V
R
Junction capacitance vs. zener voltage (typical)
Sperrschichtkapazität in Abh. v.d. Zenerspg. (typ.)
Typ. thermal resistance vs lead length
Typ. therm. Widerst. in Abh. der Anschlusslänge
50
50
40
30
20
10
0
R
thL
[K/W]
[mm]
L
12
8
4
0
L
0
2
3
4
5
6
7
8
10
[V]
V
Z
[mA]
50
150
0
100
I
Z
Typical breakdown characteristic
Typische Abbruchspannung
– tested with pulses
– gemessen mit Impulsen
5,6
6,2
6,8
7,5
8,2
9,1
I
ZT
I
Zmax
1
T = 25°C
j
I = 5 mA
Z
10
18
24
30
36
43
51
62
56
68
75
82
91
100
T = 25°C
j
I
ZT
I
Zmax
Typical breakdown characteristic
Typische Abbruchspannung
– tested with pulses
– gemessen mit Impulsen



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