2N3583 datasheet(1/2 Pages) ISC

Numer części	2N3583

Szczegółowy opis	isc Silicon NPN Power Transistor

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2N3583

DESCRIPTION

·Contunuous Collector Current-IC= 1A

·Power Dissipation-PD=35W @TC= 25℃

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 5.0 V(Max)@ IC = 1A

APPLICATIONS

·Designed for high-speed switching and linear amplifier appli-

cation for high-voltage operational amplifiers, switching regu-

lators, converters,deflection stages and high fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

250

V

VCEO

Collector-Emitter Voltage

175

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

1.0

A

ICM

Collector Current-Peak

5.0

A

IB

B

Base Current

1.0

A

PC

Collector Power Dissipation@TC=25℃

35

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

5.0

℃/W

isc Website：www.iscsemi.cn

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