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2N5191 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5191 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5190 2N5191 2N5192 DESCRIPTION ・ ・With TO-126 package ・Complement to type 2N5193/5194/5195 ・Excellent safe operating area APPLICATIONS ・For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5190 40 2N5191 60 VCBO Collector-base voltage 2N5192 Open emitter 80 V 2N5190 40 2N5191 60 VCEO Collector-emitter voltage 2N5192 Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 4 A ICM Collector current-Peak 7 A IB Base current 1 A PD Total power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 3.12 ℃/W |
Podobny numer części - 2N5191 |
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Podobny opis - 2N5191 |
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