2N6687 datasheet(1/3 Pages) ISC

Numer części	2N6687

Szczegółowy opis	Silicon NPN Power Transistors

PDF	3 Pages

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6687

DESCRIPTION

・With TO-3 package

・Fast switching speed

・Low collector saturation voltage

APPLICATIONS

・Designed for high-power switching

circuits applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

280

V

VCEO

Collector-emitter voltage

Open base

180

V

VEBO

Emitter-base voltage

Open collector

8

V

IC

Collector current

25

A

ICM

Collector current-peak

50

A

PC

Collector power dissipation

TC=25℃

200

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

0.875

℃/W

Fig.1 simplified outline (TO-3) and symbol

Podobny numer części - 2N6687

Producent	Numer części	Arkusz danych	Szczegółowy opis
Seme LAB	2N6687	11Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
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Podobny opis - 2N6687

Producent	Numer części	Arkusz danych	Szczegółowy opis
Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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Savantic, Inc.	2SC2497	107Kb / 3P	Silicon NPN Power Transistors
	2SC2517	104Kb / 3P	Silicon NPN Power Transistors
	2SC2562	143Kb / 5P	Silicon NPN Power Transistors
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