2N6739 datasheet(2/2 Pages) ISC

Numer części	2N6739

Szczegółowy opis	isc Silicon NPN Power Transistor

PDF	2 Pages

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2N6739

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA; IB= 0

350

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1A

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 8A; IB= 4A

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

1.6

ICEV

Collector Cutoff Current

VCEV= 550V;VBE(off)=-1.5V

VCEV= 550V;VBE(off)=-1.5V;TJ= 100℃

0.1

1.0

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

hFE

DC Current Gain

IC= 5A ; VCE= 3V

Current-Gain

—Bandwidth Product

IC= 0.2A; VCE= 10V, ftest= 1MHz

MHz

Switching Times; Resistive Load

Delay Time

0.1

μs

Rise Time

0.4

μs

Storage Time

2.5

μs

Fall Time

IC= 5A; IB1= -IB2= 1A,VCC= 125V;

tp= 20μs, Duty Cycle≤1%

0.5

μs

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