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2SB765 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited

Numer części 2SB765
Szczegółowy opis  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB765 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SB765 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SB765 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB765
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -25mA, RBE= ∞
-120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -50mA , IC= 0
-7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -1.5A, IB= -3mA
B
-1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -3A, IB= -30mA
B
-3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= -1.5A, IB= -3mA
B
-2.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= -3A, IB= -30mA
B
-3.5
V
ICBO
Collector Cutoff Current
VCB= -120V, IE= 0
-100
μA
ICEO
Collector Cutoff Current
VCE= -100V, RBE= ∞
-10
μA
hFE
DC Current Gain
IC= -1.5A; VCE= -3V
1000
20000
Switching times
ton
Turn-on Time
0.8
μs
tstg
Storage Time
3.0
μs
tf
Fall Time
IC= -1.5A; IB1= -IB2= -3mA
1.5
μs
isc Website：www.iscsemi.cn



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