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2SB1015 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1015 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1015 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(BR) Collector-emitter breakdown voltage IC=-50mA; IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.7 V VBE Base-emitter voltage IC=-0.5A ;VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-60V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-7V; IC=0 -100 μA hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 200 hFE-2 DC current gain IC=-3A ; VCE=-5V 20 fT Transition frequency IC=-0.5A; VCE=-5V 9 MHz COB Collector output capacitance f=1MHz ; VCB=-10V 150 pF Switching times ton Trun-on time 0.4 μs ts Storage time 1.7 μs tf Fall time RL=15Ω;VCC=-30V IB1=-IB2=-0.2A Duty cycle≤1% 0.5 μs hFE-1 Classifications O Y 60-120 100-200 |
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