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SW13N50 Arkusz danych(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW13N50 Arkusz danych(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
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4 / 7 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Fig. 9. Maximum drain current vs. case temperature. Fig. 8. On resistance variation vs. junction temperature Fig. 10. Maximum safe operating area Fig. 11. Transient thermal response curve 4/7 Fig 7. Breakdown Voltage Variation vs. Junction Temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 T J , Junction Temperature [ o C] *. Notes : 1. V GS = 10 V 2. I D = 4.4 A 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 DC 10 ms 1 ms 100 s Operation in This Area is Limited by R DS(on) ،ط Notes : 1. T C = 25 oC 2. T J = 150 oC 3. Single Pulse V DS , Drain-Source Voltage [V] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ،ط Notes : 1. Z ¥èJC (t) = 1 ،ة/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z ¥èJC (t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1 , Square Wave Pulse Duration [sec] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 T C' Case Temperature [ oC] SAMWIN SW13N50 |
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