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SW634 Arkusz danych(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

Numer części SW634
Szczegółowy opis  N-channel MOSFET
PDF  7 Pages
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Producent  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
Strona internetowa  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW634 Arkusz danych(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW634 Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW634 Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
،ط Notes :
1. V
GS
= 10 V
2. I
D
= 4.5 A
T
J
, Junction Temperature [
oC]
25
50
75
100
125
150
0
2
4
6
8
10
T
C'
Case Temperature [
o
C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
،ط Notes :
1. Z
¥èJC
(t) = 1.60 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
SW634
SAMWIN
4/7



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