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2SB1559 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1559 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Darlington Power Transistors 2SB1559 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA -2.5 V VBEsat Base-emitter saturation voltage IC=-6A ;IB=-6mA -3.0 V ICBO Collector cut-off current VCB=-160V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE DC current gain IC=-6A ; VCE=-4V 5000 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 160 pF fT Transition frequency IC=1A ; VCE=-12V 65 MHz Switching times ton Turn-on time 0.7 μs ts Storage time 3.6 μs tf Fall time IC=-6A;RL=10Ω IB1=- IB2=-6mA VCC=60V 0.9 μs hFE Classifications O P Y 5000-12000 6500-20000 15000-30000 |
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