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2SB1626 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1626 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Darlington Power Transistors 2SB1626 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -110 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-5mA -2.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-5mA -3.0 V ICBO Collector cut-off current VCB=-110V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V 5000 fT Transition frequency IC=-0.5A ; VCE=-12V 100 MHz COB Collector output capacitance f=1MHz;VCB=-10V 110 pF Switching times ton Turn-on time 1.1 μs ts Storage time 3.2 μs tf Fall time IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6Ω 1.1 μs hFE Classifications O p Y 5000-12000 6500-20000 15000-30000 |
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