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2SC3762 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3762 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3762 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A 0.6 V VBEsat Base-emitter saturation voltage IC=10A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=100V ;IE=0 10 μA IEBO Emitter cut-off current VEB=4V; IC=0 10 μA hFE DC current gain IC=5A ; VCE=5V 30 120 |
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