2SC3968 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3968

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 1.0A ; IB1= 0.1A, L= 1mH

400

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 50μA; IE= 0

400

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA; IB= 0

400

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50μA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 1A; IB= 0.2A

1.5

ICBO

Collector Cutoff Current

VCB= 400V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

μA

hFE

DC Current Gain

IC= 0.1A ; VCE= 5V

Current-Gain—Bandwidth Product

IE= -0.1A ; VCE= 10V

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; f= 1.0MHz

Switching times

ton

Turn-on Time

1.0

μs

tstg

Storage Time

2.5

μs

Fall Time

IC= 0.8A ; IB1= -IB2= 0.08A;

RL= 250Ω;VCC≈ 200V

1.0

μs

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