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2SC4960 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części 2SC4960
Szczegółowy opis  isc Silicon NPN Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4960 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4960
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 900V(Min)
·High Switching Speed
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCES
Collector-Emitter Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
2
A
IB
B
Base Current-Continuous
0.3
A
Collector Power Dissipation
@ TC=25℃
40
PC
Collector Power Dissipation
@ Ta=25℃
3
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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