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2SD371 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD371 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SD371 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 2.5 V VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 40 240 hFE-2 DC Current Gain IC= 4A; VCE= 5V 20 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 100 pF fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 8 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240 isc Website:www.iscsemi.cn |
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