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2SD1525 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1525 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1525 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20A, IB= 0.2A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 20A, IB= 0.2A 2.5 V ICBO Collector Cutoff current VCB= 100V, IE= 0 0.1 mA IEBO Emitter Cutoff current VEB= 5V, IC= 0 10 mA hFE-1 DC Current Gain IC= 20A; VCE= 5V 1000 hFE-2 DC Current Gain IC= 30A; VCE= 5V 200 VECF C-E Diode Forward Voltage IF= 10A 3.0 V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 10 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 500 pF Switching Times ton Turn-On Time 1.5 μs tstg Storage Time 10 μs tf Fall Time IB1 = -IB2= 10mA; VCC= 50V; RL= 10Ω 1.5 μs isc Website:www.iscsemi.cn |
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