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2SD1553 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1553 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1553 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 5.0 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 95 pF VF Diode forward voltage IF=2.5A 1.6 2.0 V tf Fall time ICP=2A ;IB1(end)=0.6A 0.5 1.0 μs |
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