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2SD1603 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części 2SD1603
Szczegółowy opis  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1603 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1603
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 4A
·Complement to Type 2SB1103
APPLICATIONS
·Designed for low frequency power amplifiers applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICP
Collector Current-Peak
12
A
PC
Collector Power Dissipation
@ TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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