2SD1670 datasheet(1/2 Pages) ISC

Numer części	2SD1670

Szczegółowy opis	isc Silicon NPN Darlington Power Transistor

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Producent	ISC [Inchange Semiconductor Company Limited]

Strona internetowa	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD1670

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·High DC Current Gain-

: hFE= 1000( Min.) @ IC= 10A

·Low Collector Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ IC= 10A

APPLICATIONS

·For low speed high current switching industrial use.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

±10

A

ICM

Collector Current-Peak

±20

A

IB

Base Current-Continuous

1

A

Collector Power Dissipation

@Ta=25℃

3.5

PC

Collector Power Dissipation

@TC=25℃

65

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

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