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2SD1827 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1827 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1827 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 70 V V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 60 V VCEsat Collector-emitter saturation voltage IC=5A ; IB=10mA 0.9 1.5 V VBEsat Base-emitter saturation voltage IC=5A ; IB=10mA 2.0 V ICBO Collector cut-off current VCB=40V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 3.0 mA hFE DC current gain IC=5A ; VCE=2V 2000 5000 Switching times ton Turn-on time 0.6 μs ts Storage time 3.0 μs tf Fall time IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4Ω 1.8 μs |
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