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3DD7D Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części 3DD7D
Szczegółowy opis  Silicon NPN Power Transistors
PDF  3 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DD7D Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

  3DD7D Datasheet HTML 1Page - Inchange Semiconductor Company Limited 3DD7D Datasheet HTML 2Page - Inchange Semiconductor Company Limited 3DD7D Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD7D
DESCRIPTION
·
·With TO-3 package
·High power dissipation
APPLICATIONS
·power amplifier
·Low-speed switching
·Power regulator
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Absolut maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7.5
A
PC
Collector power dissipation
TC=75℃
75
W
Tj
Junction temperature
-55~175
℃
Tstg
Storage temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
1.33
℃/W
Fig.1 simplified outline (TO-3) and symbol


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