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BD277 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited

Numer części BD277
Szczegółowy opis  isc Silicon PNP Power Transistor
PDF  2 Pages
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Producent  ISC [Inchange Semiconductor Company Limited]
Strona internetowa  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD277 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon PNP Power Transistor
BD277
DESCRIPTION
·Wide Area of Safe Operation
·Low Saturation Voltage-
·High Power Dissipation
APPLICATIONS
·Designed for use in series regulators and shunt regulators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-45
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-7
A
IB
Base Current
-3
A
PC
Collector Power Dissipation
@ TC=25℃
70
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.78
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
70
℃/W


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