21N65M5 datasheet(9/14 Pages) STMICROELECTRONICS

Numer części	21N65M5

Szczegółowy opis	N-channel 650 V, 0.175 Ω, 17 A PowerFLAT??(8x8) HV ultra low gate charge MDmesh™V Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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9 / 14 page

STL21N65M5

Test circuits

Doc ID 17438 Rev 4

9/14

Test circuits

Figure 15.

Switching times test circuit for

resistive load

Figure 16.

Gate charge test circuit

Figure 17.

Test circuit for inductive load

switching and diode recovery times

Figure 18.

Unclamped inductive load test

circuit

Figure 19.

Unclamped inductive waveform

Figure 20.

Switching time waveform

AM01468v1

VGS

D.U.T.

2200

μF

3.3

μF

VDD

AM01469v1

VDD

47k

2.7k

12V

Vi=20V=VGMAX

2200

μF

IG=CONST

100

100nF

D.U.T.

AM01470v1

D.U.T.

FAST

DIODE

L=100

μH

μF

3.3

1000

μF

VDD

AM01471v1

D.U.T.

2200

μF

3.3

μF

VDD

AM01472v1

V(BR)DSS

VDD

IDM

AM05540v2

Vgs

Vds

90%Vds

10%Id

90%Vgs

Tdelay-off

Tfall

Trise

Tcross -over

10%Vds

90%Id

Vgs(I(t))

-off

Tfall

Trise

))

Concept waveform for Inductive Load Turn-off

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