| Zakładka z wyszukiwarką danych komponentów |
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BDX87C Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDX87C Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BDX87C CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 100 V VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=24mA 2.0 V VCEsat-2 Collector-emitter saturation voltage IC=12A ;IB=120mA 3.0 V VBEsat Base-emitter saturation voltage IC=12A ;IB=120mA 4.0 V VBE Base-emitter on voltage IC=6A ; VCE=3V 2.8 V hFE-1 DC current gain IC=5A ; VCE=3V 1000 hFE-2 DC current gain IC=6A ; VCE=3V 750 18000 hFE-3 DC current gain IC=12A ; VCE=3V 100 ICBO Collector cut-off current VCB=100V; IE=0 TC=150℃ 0.5 5.0 mA ICEO Collector cut-off current VCE=50V; IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA VF-1 Diode forward voltage IF=3A 1.8 V VF-2 Diode forward voltage IF=8A 2.5 V |
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