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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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BDY80 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDY80 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BDY80 DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 36W @TC= 25℃ ·Complement to Type BDY82 APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEX Collector-Emitter Voltage VBE= -1.5V 40 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A IB B Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 36 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W isc Website：www.iscsemi.cn |
Podobny numer części - BDY80 |
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Podobny opis - BDY80 |
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