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BUV28 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV28 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV28 DESCRIPTION ・ ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・High frequency and efficiency converters ・Switching regulators ・Motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 2 A Ptot Total power dissipation TC=25℃ 70 W Tj Max.operating junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-case Thermal resistance junction case 1.785 ℃/W |
Podobny numer części - BUV28 |
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Podobny opis - BUV28 |
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