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SS35 Arkusz danych(PDF) 3 Page - Vishay Siliconix

Numer części SS35
Szczegółowy opis  Surface Mount Schottky Barrier Rectifier
PDF  4 Pages
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SS35 Arkusz danych(HTML) 3 Page - Vishay Siliconix

  SS35 Datasheet HTML 1Page - Vishay Siliconix SS35 Datasheet HTML 2Page - Vishay Siliconix SS35 Datasheet HTML 3Page - Vishay Siliconix SS35 Datasheet HTML 4Page - Vishay Siliconix  
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SS32 thru SS36
Vishay General Semiconductor
Document Number: 88751
Revision: 23-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Current Characteristics
0
0.4
0.8
1.2
0.01
0.1
1
10
100
0.2
0.6
1.0
1.4
1.6
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
SS32 - SS34
SS35 & SS36
0
20
40
60
80
100
100
10
1
0.1
0.01
0.001
SS32 - SS34
SS35 & SS36
T
A = 125 °C
T
A = 25 °C
T
A = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0.1
1
10
100
10
1000
SS32 - SS34
SS35 & SS36
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Reverse Voltage (V)
100
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC)
0.185 (4.69)
MAX.
0.320 REF.
0.126 (3.20)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
0 (0)



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