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VB30200C Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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VB30200C Arkusz danych(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() New Product V30200C, VF30200C, VB30200C & VI30200C Vishay General Semiconductor Document Number: 89014 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 4. Typical Reverse Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 0.1 10 100 0.2 0.4 0.6 0.8 1.2 1.0 Instantaneous Forward Voltage (V) T A = 150 °C T A = 125 °C T A = 25 °C 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) T J = 150 °C T J = 125 °C T J = 25 °C T J = 100 °C 100 10 1000 10 000 0.1 1 10 100 Reverse Voltage (V) Figure 6. Typical Transient Thermal Impedance Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode t - Pulse Duration (s) 0.1 1 10 0.01 0.1 1 10 100 Junction to Case V(B,I)30200C 1 10 0.01 0.1 1 10 100 t - Pulse Duration (s) Junction to Case VF30200C |
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