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BUW50 Arkusz danych(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW50 Arkusz danych(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW50 DESCRIPTION ·With TO-3PN package ·High speed switching ·Low saturation voltage APPLICATIONS ·Designed for use in general purpose power amplifier application PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 125 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 25 A ICM Collector current-peak 50 A PD Totalpower dissipation TC=25℃ 150 W Tj Junction temperature 175 ℃ Tstg Storage temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.0 ℃/W Fig.1 simplified outline (TO-3PN) and symbol |
Podobny numer części - BUW50 |
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Podobny opis - BUW50 |
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