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MMBD4448Z Arkusz danych(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBD4448Z Arkusz danych(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() MMBD4448Z 0.25A , 100V Plastic-Encapsulated Switching Diode Elektronische Bauelemente 21-Jul-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. E F J B C D G A H REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27 D 1.10 1.30 J 0.10 0.30 E - 0.05 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Fast switching speed High Conductance MARKING PACKAGE INFORMATION ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Symbol Rating Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage VRRM 80 V Working Peak Reverse Voltage VRWM 80 V DC Blocking Voltage VR 80 V RMS Reverse Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current t=1.0µs IFSM 4.0 A t=1.0s 1.5 Power Dissipation PD 150 mW Thermal Resistance, Junction to Ambient RθJA 833 K / W Storage Temperature TSTG -65~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Max. Unit Test Conditions Reverse Breakdown Voltage VR 80 - V IR=2.5µA Forward Voltage VF1 0.62 0.72 V IF=5mA VF2 - 0.855 V IF=10mA VF3 - 1.0 V IF=100mA VF4 - 1.25 V IF=150mA Maximum DC Reverse Current at rated DC blocking voltage IR1 - 0.1 µA VR=70V IR2 - 25 nA VR=20V Capacitance between terminals CT - 3.5 pF VR=6V,f=1MHz Maximum Reverse Recovery Time TRR - 4 nS VR=6V,IF=5mA KAL Package MPQ Leader Size SOT-563 3K 7 inch SOT-563 |
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