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LL4150 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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LL4150 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() www.vishay.com 2 Document Number 85558 Rev. 1.8, 01-Sep-10 LL4150 Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min. Typ. Max. Unit Forward voltage IF = 1 mA VF 540 620 mV IF = 10 mA VF 660 740 mV IF = 50 mA VF 760 860 mV IF= 100 mA VF 820 920 mV IF = 200 mA VF 870 1000 mV Reverse current VR = 50 V IR 100 nA VR = 50 V, Tj = 150 °C IR 100 µA Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD 2.5 pF Reverse recovery time IF = IR = 10 to 100 mA, iR = 0.1 x IR, RL = 100 Ω trr 4ns Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 040 80 120 160 200 0.01 0.1 1 10 100 Tj - Junction Temperature (°C) 94 9100 Scattering Limit V R = 50 V 00.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9162 Scattering Limit Tj = 25 °C |
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