Semiconductor Group

57

03.96

Type

Ordering Code

BSM 181

C67076-A1001-A2

BSM 181 R

C67076-A1016-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Drain-source voltage

V

DS

800

V

Drain-gate voltage,

R

V

DGR

800

Gate-source voltage

V

GS

± 20

Continuous drain current,

T

I

D

36

A

Pulsed drain current,

T

I

D puls

144

Operating and storage temperature range

T

– 55 … + 150

˚C

Power dissipation,

T

P

tot

700

W

Thermal resistance

Chip-case

R

th JC

≤ 0.18

K/W

V

is

2500

V

ac

Creepage distance, drain-source

–

16

mm

Clearance, drain-source

–

11

DIN humidity category, DIN 40 040

–

F

–

IEC climatic category, DIN IEC 68-1

–

55/150/56

1)

See chapter Package Outline and Circuit Diagrams.

2)

Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with

DIN 50 014, IEC 146, para. 492.1.

BSM 181

BSM 181 R

V

DS

= 100 V

I

D

= 200 A

R

q

Power module

q

Single switch

q

N channel

q

Enhancement mode

q

Package with insulated metal base plate

q

Package outline/Circuit diagram: 1

1)