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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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WFD830 Arkusz danych(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFD830 Arkusz danych(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 7 page  Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance WF WF WF WFD D D D830 830 830 830 2/7 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V Drain cut−off current IDSS VDS = 500 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 500 - - V Break Voltage Temperature Coefficient ΔBVDSS/ ΔTJ ID=250μA, Referenced to 25℃ - 0.55 - V/℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 2.25A - 1.16 1.5 Ω Forward Transconductance gfs VDS = 40 V, ID = 2.25A - 4.2 - S Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz - 800 1050 pF Reverse transfer capacitance Crss - 18 23 Output capacitance Coss - 76 100 Switching time Rise time tr VDD =250 V, ID =4.5A RG=25Ω (Note4,5) - 15 40 ns Turn−on time ton - 40 90 Fall time tf - 85 180 Turn−off time toff - 45 100 Total gate charge (gate−source plus gate−drain) Qg VDD = 400 V, VGS = 10 V, ID =4.5 A (Note4,5) - 32 44 nC Gate−source charge Qgs - 3.7 - Gate−drain (“miller”) Charge Qgd - 15 - Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 4.5 A Pulse drain reverse current IDRP - - - 18 A Forward voltage (diode) VDSF IDR = 4.5 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 4.5 A, VGS = 0 V, dIDR / dt = 100 A / μs - 305 - ns Reverse recovery charge Qrr - 2.6 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=24mH,IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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