MCT2 MCT2E

2

Motorola Optoelectronics Device Data

Characteristic

Symbol

Min

Typ(1)

Max

Unit

INPUT LED

Forward Voltage (IF = 20 mA)

TA = 25°C

TA = –55°C

TA = 100°C

VF

—

—

—

1.23

1.35

1.15

1.5

—

—

Volts

Reverse Leakage Current (VR = 3 V)

IR

—

0.01

10

µA

Capacitance (V = 0 V, f = 1 MHz)

CJ

—

18

—

pF

OUTPUT TRANSISTOR

Collector–Emitter Dark Current (VCE = 10 V)

TA = 25°C

TA = 100°C

ICEO

—

—

1

1

50

—

nA

µA

Collector–Base Dark Current (VCB = 10 V)

TA = 25°C

TA = 100°C

ICBO

—

—

0.2

100

20

—

nA

Collector–Emitter Breakdown Voltage (IC = 1 mA)

V(BR)CEO

30

45

—

Volts

Collector–Base Breakdown Voltage (IC = 10 µA)

V(BR)CBO

70

100

—

Volts

Emitter–Collector Breakdown Voltage (IE = 100 µA)

V(BR)ECO

7

7.8

—

Volts

DC Current Gain (IC = 5 mA, VCE = 5 V)

hFE

—

500

—

—

Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)

CCE

—

7

—

pF

Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)

CCB

—

19

—

pF

Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)

CEB

—

9

—

pF

COUPLED

Output Collector Current (IF = 10 mA, VCE = 10 V)

IC (CTR)(2)

2 (20)

7 (70)

—

mA (%)

Collector–Emitter Saturation Voltage (IC = 2 mA, IF = 16 mA)

VCE(sat)

—

0.19

0.4

Volts

Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)

ton

—

2.8

—

µs

Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω,)(3)

toff

—

4.5

—

µs

Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)

tr

—

1.2

—

µs

Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 Ω)(3)

tf

—

1.3

—

µs

Isolation Voltage (f = 60 Hz, t = 1 sec)(4)

VISO

7500

—

—

Vac(pk)

Isolation Resistance (V = 500 V)(4)

RISO

1011

—

—

Ω

Isolation Capacitance (V = 0 V, f = 1 MHz)(4)

CISO

—

0.2

—

pF

1. Always design to the specified minimum/maximum electrical limits (where applicable).

2. Current Transfer Ratio (CTR) = IC/IF x 100%.

3. For test circuit setup and waveforms, refer to Figure 11.

4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.