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1N70L-T92-R Arkusz danych(PDF) 2 Page - Unisonic Technologies

Numer części 1N70L-T92-R
Szczegółowy opis  1.2A, 700V N-CHANNEL POWER MOSFET
PDF  8 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

1N70L-T92-R Arkusz danych(HTML) 2 Page - Unisonic Technologies

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1N70
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-171,C
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
1.2
A
Continuous Drain Current
ID
1.2
A
Pulsed Drain Current (Note 2)
IDM
4.8
A
Single Pulsed (Note 3)
EAS
50
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
4.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
3
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
79
℃
/W
Junction to Case
θJc
29
℃
/W



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