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MBR20150SC Arkusz danych(PDF) 3 Page - BCD Semiconductor Manufacturing Limited |
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MBR20150SC Arkusz danych(HTML) 3 Page - BCD Semiconductor Manufacturing Limited |
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3 / 10 page ![]() Data Sheet HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150SC Mar. 2011 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Ordering Information MBR20150SC - E1: Lead Free Circuit Type G1: Green Part Number Marking ID Package Lead Free Green Lead Free Green Packin g Type TO-220-3 (2) MBR20150SCT- E1 MBR20150SCT- G1 MBR20150SCT- E1 MBR20150SCT- G1 Tube TO-220F-3 MBR20150SCTF -E1 MBR20150SCTF -G1 MBR20150SCTF -E1 MBR20150SCTF -G1 Tube BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with “G1” suffix are available in green packages. Absolute Maximum Ratings ( Per Diode Leg) (Note 1) Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. Note 2: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/ θJA. Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 150 V Average Rectified Forward Current (Rated VR) TC=134°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20kHz) TC=133°C IFRM 20 A Non repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Half Wave, Single Phase, 60Hz) IFSM 150 A Operating Junction Temperature Range (Note 2) TJ 150 °C Storage Temperature Range TSTG -55 to 150 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/ µs ESD (Machine Model=C) >400 V ESD (Human Body Model=3B) >8000 V Package T: TO-220-3 (2) TO-220-3 (Optional) TF: TO-220F-3 Blank: Tube |
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