UG5JG-AL5-R datasheet(2/3 Pages) UTC

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UG5J

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R222-004,A

ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

Input Voltage

VIN

-6

IOUT

Output Current

IC(MAX)

100

Total Power Dissipation

150 (Note 2)

Junction Temperature

+150

℃

Storage Temperature

TSTG

-50 ~ +150

℃

Notes : 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. 120mW per element must not be exceeded.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

VI(OFF)

VCC=5V, IO=100µA

0.3

Input Voltage

VI(ON)

VO=0.3V, IO=1mA

1.4

Output Voltage

VO(ON)

IO=5mA, II=0.25mA

0.1

0.3

Input Current

VI=5V

0.88

Output Current

IO(OFF)

VCC=50V, VI=0V

0.5

µA

DC Current Gain

VO=5V, IO=5mA

Transition Frequency

VCE=10V, IE=-5mA, f=100MHz (Note 1)

250

MHz

Input Resistance

KΩ

Resistance Ratio

R2/R1

3.7

4.7

5.7

Note: 1.Transition frequency of the device.

EQUIVALENT CIRCUIT (The following characteristic apply to both DTr1 and DTr2)

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