 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
UT2312L-AE3-R Arkusz danych(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
UT2312L-AE3-R Arkusz danych(HTML) 1 Page - Unisonic Technologies |
|
|
1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD UT2312 Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-205.D 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) = 33 mΩ @VGS = 4.5 V * RDS(ON) = 40 mΩ @VGS = 2.5 V * Advanced trench process technology * Excellent thermal and electrical capabilities * High density cell design for ultra low on-resistance SYMBOL 2.Gate 1.Source 3.Drain ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing UT2312L-AE3-R UT2312G-AE3-R SOT-23 S G D Tape Reel MARKING 23N L: Lead Free G: Halogen Free |
Podobny numer części - UT2312L-AE3-R |
|
Podobny opis - UT2312L-AE3-R |
|
|
|
Link URL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Link do karty katalogowej | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
