UT3416G-AE3-R datasheet(1/3 Pages) UTC

Numer części	UT3416G-AE3-R

Szczegółowy opis	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Producent	UTC [Unisonic Technologies]

Strona internetowa	http://www.utc-ic.com

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1 / 3 page

UNISONIC TECHNOLOGIES CO., LTD

UT3416

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-325.c

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UTC UT3416 is advanced n-channel enhancement

MOSFET which can provide the designer with the best combination

of excellent RDS (ON), low gate charge and low gate voltages as low

as 1.8V.When it is used as a load switch or in PWM application, the

UTC UT3416 can be considered as an ideal.

FEATURES

* VDS =20 V

* ID =6.5 A

* RDS(ON)<22 mΩ @VGS = 4.5 V

* RDS(ON) <26 mΩ @VGS = 2.5 V

* RDS(ON) <34 mΩ @VGS = 1.8 V

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT3416L-AE3-R

UT3416G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34S

L: Lead Free

G: Halogen Free

Podobny numer części - UT3416G-AE3-R

Producent	Numer części	Arkusz danych	Szczegółowy opis
Unisonic Technologies	UT3416G-AE3-R	163Kb / 3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
VBsemi Electronics Co.,...	UT3416G-AE3-R	482Kb / 9P	N-Channel 30-V (D-S) MOSFET

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Podobny opis - UT3416G-AE3-R

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UT3416G-AE3-R Arkusz danych(PDF) 1 Page - Unisonic Technologies

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