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UT9435HL-S08-R Arkusz danych(PDF) 3 Page - Unisonic Technologies

Numer części UT9435HL-S08-R
Szczegółowy opis  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT9435HL-S08-R Arkusz danych(HTML) 3 Page - Unisonic Technologies

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UT9435H
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-131.C
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (Note 3)
TA=125℃
ID
±5.3
A
Pulsed Drain Current (Note 1, 2)
IDM
±20
A
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
50
/W
℃
ELECTRICAL CHARACTERISTICS (TA =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-30
V
Drain-Source Leakage Current
IDSS
VDS =-24 V, VGS =0 V
-1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1
-3
V
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS =-10V, ID =-5.3A
44
50
mΩ
VGS =-4.5V, ID =-4.2A
74
90
mΩ
On State Drain Current
ID(ON)
VDS = -5V, VGS =-10V
-20
A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-15V, VGS =0V,
f=1.0MHz
1040
pF
Output Capacitance
COSS
420
pF
Reverse Transfer Capacitance
CRSS
150
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note 2)
tD(ON)
VDD =-15V, ID=-1A,
VGEN =-10V, RG =6Ω
19
26
ns
Turn-ON Rise Time
tR
9
13
ns
Turn-OFF Delay Time
tD(OFF)
74
105
ns
Turn-OFF Fall Time
tF
36
50
ns
Total Gate Charge (Note 2)
QG
VDS =-15V, VGS =-10V,
ID =-4.6A
22.5
29
nC
Gate-Source Charge
QGS
2
nC
Gate-Drain Charge
QGD
6
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
VGS =0V, IS =-5.3A
-0.84 -1.3
V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board



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