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UT8205AG-P08-R Arkusz danych(PDF) 2 Page - Unisonic Technologies

Numer części UT8205AG-P08-R
Szczegółowy opis  N-CHANNEL ENHANCEMENT MODE
PDF  3 Pages
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT8205AG-P08-R Arkusz danych(HTML) 2 Page - Unisonic Technologies

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UT8205A
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-287.B
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous
ID
6
A
Drain Current (Note 2)
Pulsed
IDM
20
A
SOT-26
1.14
W
Power Dissipation (Ta=25°C) (Note 3)
SOP-8/TSSOP-8
PD
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
3. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
SOT-26
110
°C/W
SOP-8
78
°C/W
Junction to Ambient (Note)
TSSOP-8
θJA
125
°C/W
Note: Pulse Test : Pulse width≤300μs, Duty cycle≤2%
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
20
V
Breakdown Voltage Temperature
Coefficient
J
DSS
T
Δ
BV
Δ
ID=1mA, Reference to 25°C
0.03
V/°C
Drain-Source Leakage Current
IDSS
VDS=20V, VGS=0V,
1
μA
Gate-Source Leakage Current
IGSS
VGS=±8V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.5
1.5
V
VGS=4.5V, ID=6.0A
28
mΩ
Drain-Source On-State Resistance (Note)
RDS(ON)
VGS=2.5V, ID=5.2A
38
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1035
pF
Output Capacitance
COSS
320
pF
Reverse Transfer Capacitance
CRSS
VDS=20V, VGS=0V, f=1.0MHz
150
pF
SWITCHING PARAMETERS
Turn-ON Delay Time (Note)
tD(ON)
30
ns
Turn-ON Rise Time
tR
70
ns
Turn-OFF Delay Time
tD(OFF)
40
ns
Turn-OFF Fall-Time
tF
VGS=5V, VDS=10V, RD=10Ω,
RG=6Ω, ID=1A
65
ns
Total Gate Charge(Note)
QG
23
nC
Gate Source Charge
QGS
4.5
nC
Gate Drain Charge
QGD
VDS =20V, VGS =5V, ID =6.0A
7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
VSD
IS=1.7A, VGS=0V
1.2
V
Diode Continuous Forward Current
IS
VD=VG, VS=1.3V
1.54
A
Note: Surface mounted on 1 in
2 copper pad of FR4 board; 208°C/W when mounted on min.



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