TIP110A datasheet(2/3 Pages) UTC

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TIP110A

Preliminary

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R203-004.C

ABSOLUTE MAXIMUM RATINGS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

-45

Collector to Emitter Voltage

VCEO

-35

Emitter to Base Voltage

VEBO

-5

Collector Current

-10

Power Dissipation

Junction Temperature

150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-10mA, IE=0A

-45

Collector-Emitter Breakdown Voltage

BVCEO

IC =-1mA, IB =0A

-35

Emitter-Base Breakdown Voltage

BVEBO

IE=-10mA, IC=0A

-5

Collect Cut-off Current

ICBO

VCB =-45V, IE =0A

-4

μA

Collector-Emitter Cut-Off Current

ICEO

VCE =-35V, IB=0A

-10

μA

Emitter Cut-off Current

IEBO

VBE =-5V, IC=0A

-2.0

Collector-Emitter Saturation Voltage

VCE(SAT)

IC =-10A, IB =-0.1A

-2.0

Base-Emitter On Voltage

VBE(ON)

VCE =-2.0V ,IC =-5mA

-2.0

hFE1

VCE =-2.0V ,IC =-0.5A

2000

60000

DC Current Gain

hFE2

VCE =-2.0V ,IC =-10A

1000

60000

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