Z0103MATSLASHR datasheet(3/13 Pages) NXP

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Z0103MA

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Product data sheet

Rev. 4 — 18 March 2011

3 of 13

NXP Semiconductors

Z0103MA

4Q Triac

Limiting values

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state voltage

600

IT(RMS)

RMS on-state current

full sine wave; Tlead ≤ 45 °C;

see Figure 3; see Figure 1; see Figure 2

-1

ITSM

non-repetitive peak on-state

current

full sine wave; Tj(init) =25°C;

tp = 20 ms; see Figure 4; see Figure 5

-8

full sine wave; Tj(init) =25°C;

tp =16.7ms

-8.5

I2tI2t for fusing

tp = 10 ms; sine-wave pulse

0.32

A2s

dIT/dt

rate of rise of on-state current

IT =1A; IG =20mA; dIG/dt = 0.1 A/µs;

T2+ G+

-50

A/µs

IT =1A; IG =20mA; dIG/dt = 0.1 A/µs;

T2+ G-

-50

A/µs

IT =1A; IG =20mA; dIG/dt = 0.1 A/µs;

T2- G-

-50

A/µs

IT =1A; IG =20mA; dIG/dt = 0.1 A/µs;

T2- G+

-20

A/µs

IGM

peak gate current

PGM

peak gate power

PG(AV)

average gate power

over any 20 ms period

0.1

Tstg

storage temperature

-40

150

°C

junction temperature

125

°C

Fig 1.

RMS on-state current as a function of lead

temperature; maximum values

Fig 2.

RMS on-state current as a function of surge

duration; maximum values

003aac264

0.4

0.8

1.2

-50

100

150

Tlead(°C)

IT(RMS )

(A)

003a a f977

10-2

10-1

surge duration (s)

IT(RMS)

(A)

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