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CDCUN1208LP Arkusz danych(PDF) 2 Page - Texas Instruments |
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CDCUN1208LP Arkusz danych(HTML) 2 Page - Texas Instruments |
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2 / 43 page ![]() CDCUN1208LP LVCMOS LVCMOS LVCMOS 1.8V, 2.5V, or 3.3V IN2P /1,/2,/4,/8 IN1P INSEL VDD GND Power Management IN1N IN2N LVCMOS LVCMOS LVCMOS LVCMOS 1.8V, 2.5V, or 3.3V LVCMOS LVCMOS LVCMOS LVCMOS 1.8V, 2.5V, or 3.3V LVCMOS LVCMOS LVCMOS LVCMOS 1.8V, 2.5V, or 3.3V LVCMOS ERC OE OTTP LVCMOS HCSL LVDS VDD DIVIDE MODE NC ITTP LVCMOS HCSL LVDS VDD Regulator Voltage CDCUN1208LP SCAS928 – MAY 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Figure 2. CDCUN1208LP Typical Application Example – LVCMOS Output Mode 2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s) :CDCUN1208LP |
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