EDB101S datasheet(2/2 Pages) LUGUANG

2 / 2 page

-1.0A

-0.25A

+0.5A

trr

1cm

PULSE

GENERATOR

(NOTE2)

D.U.T.

NONIN-

DUCTIVE

N 1.

N1.

OSCILLOSCOPE

(NOTE1)

(+)

25VDC

(approx)

(-)

.01

1.0

040

0.1

100 120 140

TJ=25

100

TJ=100

TJ=150

100

125

150

Single phaes

half wave 60Hz

inductive load

resistive or

100

8.3ms Single Half Sine Wave

TJ=25

CHARACTERISTICS

FIG.2 -- TYPICAL FORWARD CURRENT

DERATING CURVE

NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1MΩ.22pF

2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5OΩ

SETTIMEBASEFOR

10 ns /cm

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

AMBIENT TEMPERATURE (

)

FIG.5 -- MAXIMUM NON-REPETITIVEFORWARDSURGECURRENT

FIG.6 -- TYPICAL JUNCTION CAPACITANCE

NUMBER OF CYCLES AT 60Hz

PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)

FIG.4 -- TYPICAL INSTANTANEOUS FORWARD

REVERSE VOLTAGE, VOLTS

FIG.3 -- TYPICAL REVERSE CHARACTERISTICS

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

100

200

EDB105S-EDB106S

EDB101S-EDB104S

TJ=25

0 .8

1 .0

1 .2 1 .4

0 .1

1 .0

TJ=125

P ulse W idth

=300

u S

0 .6

0 .4

.0 1

0 .2

.001

EDB101S-EDB106S

Silicon Bridge Rectifiers

Ratings AND Charactieristic Curves

http://www.luguang.cn

mail:lge@luguang.cn

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