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ATP404 Arkusz danych(PDF) 2 Page - Sanyo Semicon Device

Numer części ATP404
Szczegółowy opis  General-Purpose Switching Device Applications
PDF  7 Pages
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Producent  SANYO [Sanyo Semicon Device]
Strona internetowa  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ATP404 Arkusz danych(HTML) 2 Page - Sanyo Semicon Device

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ATP404
No. A1405-2/7
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
10
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=48A
100
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=48A, VGS=10V
5.5
7.2
mΩ
RDS(on)2
ID=48A, VGS=4.5V
7.5
10.5
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
6400
pF
Output Capacitance
Coss
490
pF
Reverse Transfer Capacitance
Crss
380
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
53
ns
Rise Time
tr
640
ns
Turn-OFF Delay Time
td(off)
380
ns
Fall Time
tf
520
ns
Total Gate Charge
Qg
VDS=30V, VGS=10V, ID=95A
120
nC
Gate-to-Source Charge
Qgs
25
nC
Gate-to-Drain “Miller” Charge
Qgd
25
nC
Diode Forward Voltage
VSD
IS=95A, VGS=0V
0.95
1.2
V
Switching Time Test Circuit
Avalanche Resistance Test Circuit
Ordering Information
Device
Package
Shipping
memo
ATP404-TL-H
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
50Ω
10V
0V
≥50Ω
VDD
L
ATP404
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=48A
RL=0.625Ω
VDD=30V
VOUT
ATP404
VIN
10V
0V
VIN



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