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RN1970FS Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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RN1970FS Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
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2 / 6 page ![]() RN1970FS,RN1971FS 2007-11-01 2 Electrical Characteristics (Ta = 25°C) (Q1,Q2 common) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ⎯ ⎯ 100 nA DC current gain hFE VCE = 5 V, IC = 1 mA 300 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 5 mA, IB = 0.25 mA ⎯ ⎯ 0.15 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 1.2 ⎯ pF RN1970FS 3.76 4.7 5.64 Input resistor RN1971FS R1 ⎯ 8 10 12 k Ω |
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